Applications and Devices by R.K. Willardson and Albert C. Beer (Eds.)

By R.K. Willardson and Albert C. Beer (Eds.)

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47The output current pulse will generally be independent of the shape of a small triggering pulse ; bulk diodes can therefore be used as pulse regenerators. The triggering sensitivity can be improved and the input isolated from the output by adding a third contact near the cathode, as was done on the device of Fig. 48 Because of the definite threshold, it is possible to perform binary logic functions by mixing input signals. Isolation between inputs can be achieved by using separate contacts, or by dividing the cathode end of the device into several legs.

The regions of frequency-length product and doping-length product normally associated with three classes of operation for uniformly doped diodes : stable amplification, Gunn oscillation, and LSA oscillation. The fourth class, bias-circuit oscillation, only occurs when there is either Gunn or LSA oscillation and is usually at a frequency-length value too small to appear on the figure. The mode of operation in the overlap region (fL = lo', n,L x 10") depends strongly on bias voltage and the circuit.

Is applicable for either halide or oxide transport. 9 ’ 8" R. R. Moest, J . Electrochem. Soc. 113, 141 (1966). K. L. Lawley, J . Electrochem. Soc. 113,240 (1966). J. J. Tietjen and J. A. Amick, J . Electrochem. Soc. 113, 724 (1966). D. Effer, J . Electrochem. Soc. 112, 1020 (1965). *' 82 58 JOHN A. 34. Schematic diagram of a vapor-synthesis system for epitaxial growth of GaAs system by bubbling hydrogen through AsCl,, which is a high-vaporpressure liquid at room temperature. The AsCl, is cracked as it enters the furnace and arsenic reacts with the gallium to form an equilibrium composition of gallium and GaAs in the source boat.

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